www.irf.com 1 3/25/01 IRF7466 smps mosfet hexfet ? power mosfet notes ? through ? are on page 8 symbol parameter typ. max. units r q jl junction-to-drain lead CCC 20 r q ja junction-to-ambient ? CCC 50 c/w thermal resistance absolute maximum ratings symbol parameter max. units v ds drain-source voltage 30 v v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 11 i d @ t a = 70c continuous drain current, v gs @ 10v 9.0 a i dm pulsed drain current ? 90 p d @t a = 25c maximum power dissipation ? 2.5 w p d @t a = 70c maximum power dissipation ? 1.6 w linear derating factor 0. 02 mw/c t j , t stg junction and storage temperature range -55 to + 150 c so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a v dss r ds(on) max(m w) w) w) w) w) i d 30v 12.5@v gs = 10v 11a pd- 93884c applications benefits l ultra-low gate impedance l very low r ds(on) l fully characterized avalanche voltage and current l high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use l high frequency buck converters for computer processor power
IRF7466 2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. CCC 0.8 1.3 v t j = 25c, i s = 8.8a, v gs = 0v ? CCC 0.66 CCC t j = 125c, i s = 8.8a, v gs = 0v ? t rr reverse recovery time CCC 42 63 ns t j = 25c, i f = 8.8a, v r =15v q rr reverse recovery charge CCC 59 89 nc di/dt = 100a/s ? t rr reverse recovery time CCC 42 63 ns t j = 125c, i f = 8.8a, v r =15v q rr reverse recovery charge CCC 61 92 nc di/dt = 100a/s ? dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ? CCC 230 mj i ar avalanche current ? CCC 8.8 a avalanche characteristics s d g diode characteristics 2.3 90 a symbol parameter min. typ. max. units conditions g fs forward transconductance 22 CCC CCC s v ds = 15v, i d = 8.8a q g total gate charge CCC 16 23 i d = 8.8a q gs gate-to-source charge CCC 7.4 11 nc v ds = 15v q gd gate-to-drain ("miller") charge CCC 5.3 8.0 v gs = 4.5v ? q oss output gate charge CCC 19 29 v gs = 0v, v ds = 15v t d(on) turn-on delay time CCC 10 CCC v dd = 15v t r rise time CCC 2.8 CCC i d = 8.8a t d(off) turn-off delay time CCC 13 CCC r g = 1.8 w t f fall time CCC 3.6 CCC v gs = 4.5v ? c iss input capacitance CCC 2100 CCC v gs = 0v c oss output capacitance CCC 710 CCC v ds = 15v c rss reverse transfer capacitance CCC 52 CCC pf ? = 1.0mhz v sd diode forward voltage parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.028 CCC v/c reference to 25c, i d = 1ma CCC 9.8 12.5 v gs = 10v, i d = 11a ? CCC 13 17 v gs = 4.5v, i d = 8.8a ? v gs(th) gate threshold voltage 1.0 CCC 3.0 v v ds = v gs , i d = 250a CCC CCC 20 a v ds = 24v, v gs = 0v CCC CCC 100 v ds = 24v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 200 v gs = 16v gate-to-source reverse leakage CCC CCC -200 na v gs = -16v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m w
IRF7466 www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 10v 5.0v 4.5v 4.0v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 10v 5.0v 4.5v 4.0v 3.5v 3.3v 3.0v 2.7v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 2.7v 0.1 1 10 100 2.5 3.0 3.5 4.0 4.5 5.0 v = 15v 20s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 11a
IRF7466 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 5 10 15 20 25 30 0 2 4 6 8 10 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 8.8a v = 15v ds v = 24v ds fig 7. typical source-drain diode forward voltage 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
IRF7466 www.irf.com 5 fig 10. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 6. on-resistance vs. drain current fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 4.5v + - v dd 25 50 75 100 125 150 0 2 4 6 8 10 12 t , case temperature ( c) i , drain current (a) c d
IRF7466 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 13a&b. basic gate charge test circuit and waveform fig 14a&b. unclamped inductive test circuit and waveforms fig 14c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - v gs q g q gs q gd v g charge t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.9a 7.0a 8.8a 0 20406080100 i d , drain current (a) 0.00 0.02 0.04 0.06 r ds (on) , drain-to-source on resistance ( w ) v gs = 10v v gs = 4.5v 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs, gate -to -source voltage (v) 0.000 0.005 0.010 0.015 0.020 0.025 r ds(on) , drain-to -source on resistance ( w ) i d = 11a
IRF7466 www.irf.com 7 so-8 package details k x 45 c 8x l 8x q h 0 .25 (.01 0) m a m a 0.10 (.004) b 8x 0.2 5 (.010 ) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3 x dim inc hes m illim e ter s m in m ax m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 b asic 1.27 ba sic e1 .025 b asic 0.635 ba sic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. c o n t r o ll in g d im e n s io n : in c h . 3. dimensions are show n in millimeters (inches). 4. o u tl in e c o n f o r m s to je d e c o u tl in e m s -01 2a a . dimension does not include mold protrusions m o ld p r o t r u s io n s n o t to e xc e e d 0.25 (.0 06 ). d im e n s io n s is th e le n g t h o f le a d f o r s o ld e r in g t o a s u b s tr a te .. 5 6 a1 e1 q so-8 part marking
IRF7466 8 www.irf.com ? repetitive rating; pulse width limited by max. junction temperature. notes: ? starting t j = 25c, l = 5.9mh r g = 25 w , i as = 8.8a. ? pulse width 400s; duty cycle 2%. ? when mounted on 1 inch square copper board, t<10 sec 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inc hes ) . 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 3/01
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